Aluminum nitride, with its excellent thermal conductivity, can replace traditional aluminum oxide and beryllium oxide, making it an ideal choice for substrate materials in large-scale integrated circuits. Furthermore, it is highly suitable for high-density packaging applications, such as VLSI components, microwave vacuum tube packaging housings, and hybrid power switch packaging, among others.
As electronic devices evolve toward higher performance and integration density, aluminum nitride is regarded as a key candidate for next-generation electronic packaging materials. It is expected that in the fields of substrates and high-density packaging, aluminum nitride will gradually replace aluminum oxide and beryllium oxide, driving continuous advancements in electronic technology.
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